Uniqueness and Regularity for the Two-dimensional Drift-diiusion Model for Semiconductors Coupled with Maxwell's Equations
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Qualitative Behavior of Weak Solutions of the Drift Diiusion Model for Semiconductor Devices Coupled with Maxwell S Equations
The transient drift-diiusion model describing the charge transport in semiconductors is considered. Poisson's equation, which is usually used, is replaced by Maxwell's equations. The diiusion-and mobility-coeecients and the dielectric and magnetic susceptibilities may depend on the space-variables. Global existence and convergence to the thermal equilibrium is shown.
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تاریخ انتشار 1996